UCSB Team Demonstrates Semipolar 410 nm Violet Laser Diodes Heteroepitaxially Grown on GaN/sapphire Substrates Provided by Saphlux

On June 16th 2020, a team led by Dr. Hongjian Li from UCSB published an article Demonstration of efficient semipolar 410 nm violet laser diodes heteroepitaxially grown on high-quality low-cost GaN/sapphire substrates in ACS Applied Electronic Materials.

The team announced that in their work, they demonstrated the first efficient semipolar 410 nm violet LDs grown on high-quality and low-cost semipolar GaN/sapphire substrates provided by Saphlux. In addition, the fabricated semipolar LD exhibits a high output power and great wall-plug efficiency.

At present, semipolar laser devices are generally fabricated on semipolar bulk GaN substrates, which is extremely expensive. It is estimated that, for the case of the same area, the cost of semipolar bulk substrates is more than 100 times higher than that of heteroepitaxially grown semipolar GaN sapphire substrates. Thus, the research is of great significance for the development of laser devices. It can greatly reduce the cost of laser fabrication and enable the widespread application of laser devices.

EL spectra before and after lasing

L-I-V curves of a 900*8 µm² LD

Pictures are from ACS Applied Electronic Materials： Demonstration of efficient semipolar 410 nm violet laser diodes heteroepitaxially grown on high-quality low-cost GaN/sapphire substrates